RIR Power Electronics and Silicon University Secure Two Research Papers at IEEE MWSCAS 2026, Advancing SiC Technology

RIR Power Electronics and Silicon University Secure Two Research Papers at IEEE MWSCAS 2026, Advancing SiC Technology​

RIR Power Electronics Ltd., in partnership with Silicon University, Odisha, has achieved a significant research milestone after two joint papers were accepted for presentation at the prestigious IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026. The symposium is scheduled to be held in Cincinnati, Ohio, USA. This achievement highlights the advancement of India's silicon carbide (SiC) semiconductor research through industry-academia collaboration.

The two accepted papers address critical aspects of High-voltage Power Electronics, including thermal management, switching efficiency, and compact system design architectures.

Focus on Next-Generation Mobility and Industrial Applications​

The first accepted paper provides a comprehensive analytical and simulation-based comparison between silicon carbide (SiC) MOSFETs and conventional Silicon IGBT Traction Inverter Topologies. Utilizing a 33 kW Permanent Magnet Synchronous Motor (PMSM) drive model, the research demonstrates the improved electrical and thermal performance of 3.3 kV SiC MOSFET technology. The findings underscore its potential to significantly enhance efficiency and reliability in next-generation electric mobility applications.

The second paper explores advancements related to 4H-SiC Implant Epitaxy MOSFET designs for High-voltage Power Electronics, covering devices rated from 3.3 kV onwards. This research employed Silvaco Technology Computer-Aided Design (TCAD) tools to thoroughly examine the balance between device performance and manufacturing simplicity, aiming to facilitate more efficient, reliable, and compact High-voltage SiC Power Devices for future industrial and energy applications.

Strengthening India's Semiconductor Ambitions​

The acceptance of these papers reflects a deep commitment to accelerating innovation in wide-bandgap power semiconductors through effective industry-academia collaboration.

Dr. Jaideep Talukdar, Vice Chancellor of Silicon University, Odisha, stated that the selection serves as evidence of meaningful partnership between academia and industry, bolstering innovation in practical power electronics systems and wide-bandgap materials.

Dr. Harshad Mehta, Non-Executive Chairman at RIR Power Electronics Ltd., commented on the significance of the achievement. He noted that the papers’ acceptance at IEEE MWSCAS 2026 testifies to the strength of the partnership with Silicon University and their shared commitment to advancing silicon carbide technologies. Dr. Mehta added that collaborations between industry and academia are essential for building indigenous capabilities and developing globally competitive power semiconductor solutions as India accelerates its semiconductor ambitions.

This accomplishment is rooted in a strategic industry-academia partnership established under a Memorandum of Understanding (MoU) signed between RIR Power Electronics and Silicon University in November 2025. The collaboration aims to advance next-generation SiC Semiconductor Devices and High-voltage Power Electronics technologies critical for electric mobility, industrial automation, renewable energy, and modern power infrastructure.

The recognition at IEEE MWSCAS 2026 marks a key milestone in the partnership, reinforcing RIR Power Electronics' commitment to driving innovation in wide-bandgap semiconductors and contributing significantly to advanced semiconductor research within India.

Stock Price Movement​

As of 11:35, RIR Power Electronics Ltd is gaining 0.55% as shares trade at ₹163.10. The stock has moved through a wide trading range today, with its intraday low reaching ₹160.55 and climbing toward an intraday high of ₹164.50.